568 citations · 794 across the 17 of their papers we have counts for
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Preliminary Results for LP VPE X-Ray Detectors
R. Adams, R. Bates, C. Da Via +5
Thick epitaxial layers have been grown using Low Pressure Vapour Phase Epitaxy techniques with low free carrier concentrations . This type of material is attractive as a medium for…
Radiation Induced Damage in GaAs Particle Detectors
R. L. Bates, C. Da'Via, V. O'Shea +3
The motivation for investigating the use of GaAs as a material for detecting particles in experiments for High Energy Physics (HEP) arose from its perceived resistance to radiation…
Recent results on GaAs detectors - 137
R. L. Bates, M. Campbell, C. Da'Via +4
The present understanding of the charge collection in GaAs detectors with respect to the materials used and its processing are discussed. The radiation induced degradation of the c…
The effects of radiation on Gallium Arsenide radiation detectors
R. L. Bates, C. Da'Via, S. D'Auria +3
Semi-insulating, undoped, Liquid Encapsulated Czochralski (SI-U LEC) GaAs detectors have been irradiated with 1MeV neutrons, 24GeV/c protons, and 300MeV/c pions. The maximum fluenc…
Characterisation of low pressure VPE GaAs diodes before and after 24 GeV/c proton irradiation
R. L. Bates, C. Da'Via, V. O'Shea +3
GaAs Schottky diode detectors have been fabricated upon Low Pressure Vapour Phase Epitaxial GaAs. The devices were characterised before and after a ~cm…