222 citations · 687 across the 9 of their papers we have counts for
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cond-mat.mtrl-sci2018★ 73 cited
Donor and Acceptor Characteristics of Native Point Defects in GaN
Zijuan Xie, Yu Sui, John Buckeridge +8
The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood.…
cond-mat.mtrl-sci2018★ 35 cited
Assignment of multiband luminescence due to the gallium vacancy-oxygen defect complex in GaN
Zijuan Xie, Yu Sui, John Buckeridge +3
Oxygen is the most common unintentional impurity found in GaN. We study the interaction between substitutional oxygen (ON) and the gallium vacancy (VGa) to form a point defect comp…