activity
20142026
most citedDetermination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals

87 citations · 228 across the 8 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

5 papers · 1 filter

cond-mat.mtrl-sci2026

Materials Informatics Across the Length Scales

Jamal Abdul Nasir, Hamide Kavak, Oguzhan Der +8

Materials informatics is increasingly used to support modelling, analysis and design across the length scales of materials science, from atomistic simulations to microstructural ch…

cond-mat.mtrl-sci2025★ 8 cited

Roadmap on Advancements of the FHI-aims Software Package

Joseph W. Abbott, Carlos Mera Acosta, Alaa Akkoush +203

Electronic-structure theory is the foundation of the description of materials including multiscale modeling of their properties and functions. Obviously, without sufficient accurac…

cond-mat.mtrl-sci2024

Modelling Silica using MACE-MP-0 Machine Learnt Interatomic Potentials

Jamal Abdul Nasir, Jingcheng Guan, Woongkyu Jee +4

Silica polymorphs and zeolites are fundamental to a wide range of industrial applications owing to their diverse structural characteristics, thermodynamic and mechanical stability…

cond-mat.mtrl-sci2018★ 73 cited

Donor and Acceptor Characteristics of Native Point Defects in GaN

Zijuan Xie, Yu Sui, John Buckeridge +8

The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood.…

cond-mat.mtrl-sci2014★ 87 cited

Determination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals

J. Buckeridge, C. R. A. Catlow, D. O. Scanlon +6

We report accurate energetics of defects introduced in GaN on doping with divalent metals, focussing on the technologically important case of Mg doping, using a model which takes i…