activity
20142026
most citedDetermination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals

87 citations · 195 across the 5 of their papers we have counts for

collaborators

5 papers

quant-ph2026

Scientific applications of quantum computing: challenges and opportunities

Bruno Camino, C. Richard A. Catlow, John Buckeridge +13

The predictive simulation of molecules and materials has had a broad and significant impact. It nevertheless remains constrained by the cost of accurately treating electronic corre…

cond-mat.mtrl-sci2026

The Future of Computing for Materials Science Challenges

Phalgun Lolur, Richard P. Padbury, George H. Booth +10

Materials discovery increasingly relies on the coordinated use of theory, computation, experiment, data-driven methods, and emerging quantum technologies, yet the full potential of…

cond-mat.mtrl-sci2018★ 73 cited

Donor and Acceptor Characteristics of Native Point Defects in GaN

Zijuan Xie, Yu Sui, John Buckeridge +8

The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood.…

cond-mat.mtrl-sci2018★ 35 cited

Assignment of multiband luminescence due to the gallium vacancy-oxygen defect complex in GaN

Zijuan Xie, Yu Sui, John Buckeridge +3

Oxygen is the most common unintentional impurity found in GaN. We study the interaction between substitutional oxygen (ON) and the gallium vacancy (VGa) to form a point defect comp…

cond-mat.mtrl-sci2014★ 87 cited

Determination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals

J. Buckeridge, C. R. A. Catlow, D. O. Scanlon +6

We report accurate energetics of defects introduced in GaN on doping with divalent metals, focussing on the technologically important case of Mg doping, using a model which takes i…