activity
20132022
most citedNegative differential resistance in graphene-based ballistic field effect transistor with oblique top gate

28 citations · 111 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.other2022★ 4 cited

Parametric Excitation and Instabilities of Spin Waves driven by Surface Acoustic Waves

Moritz Geilen, Roman Verba, Alexandra Nicoloiu +10

The parametric excitation of spin waves by coherent surface acoustic waves is demonstrated experimentally in metallic magnetic thin film structures. The involved magnon modes are a…

cond-mat.mes-hall2021★ 5 cited

Room And Cryogenic Temperature Behaviour of Magnetic Sensors Based on Gan/Si Single Saw Resonators

Alexandra Nicoloiu, Florin Ciubotaru, Claudia Nastase +6

This work analyzes resonance frequency shift vs. the applied magnetic field strength for GHz operating GaN/Si SAW single resonators. Magnetostrictive elements (Ni and CoFeB) were d…

cond-mat.mes-hall2018★ 17 cited

Wafer-scale fabrication and room-temperature experiments on graphene-based gates for quantum computation

Mircea Dragoman, Adrian Dinescu, Daniela Dragoman

We have fabricated at wafer scale graphene-based configurations suitable for implementing at room temperature one-qubit quantum gates and a modified Deutsch-Jozsa algorithm. Our me…

cond-mat.mes-hall2017★ 14 cited

Solving the graphene electronics conundrum: high mobility and high on-off ratio in graphene nanopatterned transistors

Mircea Dragoman, Adrian Dinescu, Daniela Dragoman

Tens of graphene transistors with nanoperforated channels and different channel lengths were fabricated at the wafer scale. The nanoholes have a central diameter of 20 nm and a per…

cond-mat.mes-hall2016★ 20 cited

Room temperature nanostructured graphene transistors with high on-off ratio

Mircea Dragoman, Adrian Dinescu, Daniela Dragoman

We report the batch fabrication of graphene field-effect-transistors (GFETs) with nanoperforated graphene as channel. The transistors were cut and encapsulated. The encapsulated GF…

cond-mat.mes-hall2016★ 14 cited

Room temperature on-wafer ballistic graphene field-effect-transistor with oblique double-gate

Mircea Dragoman, Adrian Dinescu, Daniela Dragoman

We have fabricated and measured ballistic graphene transistors with two oblique gates that can be independently biased. The gate lengths are about 38 nm and are separated by a dist…

cond-mat.mes-hall2014★ 28 cited

Negative differential resistance in graphene-based ballistic field effect transistor with oblique top gate

Mircea Dragoman, Adrian Dinescu, Daniela Dragoman

Negative differential resistance (NDR) with room temperature peak-valley-ratio of 8 has been observed in a ballistic field-effect-transistor (FET) based on graphene, having an obli…

cond-mat.mes-hall2013★ 9 cited

Microwave and millimeterwave electrical permittivity of graphene monolayer

Alina Cismaru, Mircea Dragoman, Adrian Dinescu +3

The effective electrical permittivity of a graphene monolayer is experimentally investigated in the 5-40 GHz range, which encompasses the microwave and the lower part of millimeter…