16 citations · 53 across the 6 of their papers we have counts for
7 papers
Symmetry-Enforced Topology and Van Hove Saddle Points in Hexagonal TiAs
Azizur Rahman, Shashi B Mishra, Sheraz Khan +8
We report the first successful growth of stoichiometric hexagonal TiAs single crystals (space group ) using chemical vapor transport and investigate their vibrational, el…
The effect of temperature and excitation energy on Raman scattering in bulk HfS
Igor Antoniazzi, Natalia Zawadzka, Magdalena Grzeszczyk +6
Raman scattering (RS) in bulk hafnium disulfide (HfS) is investigated as a function of temperature (5 K 350 K) with polarization resolution and excitation of several laser…
Fast electrically switchable large gap quantum spin Hall states in MGeZ
Rajibul Islam, Ghulam Hussain, Rahul Verma +4
Spin-polarized conducting edge currents counterpropagate in quantum spin Hall (QSH) insulators and are protected against disorder-driven localizations by the time-reversal symmetry…
Excitonic luminescence of iodine-intercalated HfS
N. Zawadzka, T. Woźniak, M. Strawski +10
Photoluminescence from bulk HfS grown by the chemical vapor transport method is reported. A series of emission lines is apparent at low temperature in the energy range of 1.4 -…
Switchable large-gap quantum spin Hall state in two-dimensional MSiZ materials class
Rajibul Islam, Rahul Verma, Barun Ghosh +4
Quantum spin Hall (QSH) insulators exhibit spin-polarized conducting edge states that are topologically protected from backscattering and offer unique opportunities for addressing…
Extrinsic n-type semiconductor transition in ZrSe2 with the metallic character through hafnium substitution
Zahir Muhammad, Yuliang Li, Sami Ullah +7
Two dimensional layered materials exhibit versatile electronic properties in their different phases. The intrinsic electronic properties of these materials can be modulated through…
Electron-Doping Induced Semiconductor to Metal Transitions in ZrSe2 Layers via Copper Atomic Intercalation
Zahir Muhammad, Kejun Mu, Haifeng Lv +6
Atomic intercalation in two dimensional (2D) layered materials can engineer the electronic structure at the atomic scale, bringing out tunable physical and chemical properties whic…