Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bi${}_x$Sb${}_{1-x}$)${}_2$Te${}_3$ - EuS Bilayers

Qi I. Yang, Aharon Kapitulnik

To further investigate the interplay between ferromagnetism and topological insulators, thin films of the low-carrier topological insulator (Bi${}_x$Sb${}_{1-x}$)${}_2$Te${}_3$ were deposi…