activity
20162024
most citedField-effect transistors of high-mobility few-layer SnSe

105 citations · 153 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2024★ 1 cited

Resolving and routing the magnetic polymorphs in 2D layered antiferromagnet

Zeyuan Sun, Canyu Hong, Yi Chen +11

Polymorphism, commonly denoting the variety of molecular or crystal structures, is a vital element in many natural science disciplines. In van der Waals layered antiferromagnets, a…

cond-mat.mtrl-sci2024

Magnetostatic effect on spin dynamics properties in antiferromagnetic Van der Waals material CrSBr

Hongyue Xu, Nan Jiang, Haoran Chen +11

Van der Waals (vdW) antiferromagnets are exceptional platforms for exploring the spin dynamics of antiferromagnetic materials owing to their weak interlayer exchange coupling. In t…

cond-mat.str-el2024★ 12 cited

Mott insulating phase and coherent-incoherent crossover across magnetic phase transition in 2D antiferromagnetic CrSBr

Fan Wu, Xuefeng Zhang, Yi Chen +15

In two-dimensional van der Waals magnetic materials, the interplay between magnetism and electron correlation can give rise to new ground states and lead to novel transport and opt…

cond-mat.mtrl-sci2022

Observation of non-trivial topological electronic structure of orthorhombic SnSe

H. J. Zheng, W. J. Shi, C. W. Wang +20

Topological electronic structures are key to the topological classification of quantum materials and play an important role in their physical properties and applications. Recently,…

cond-mat.mtrl-sci2018★ 35 cited

Photoemission Study of the Electronic Structure of Valence Band Convergent SnSe

C. W. Wang, Y. Y. Y. Xia, Z. Tian +17

IV-VI semiconductor SnSe has been known as the material with record high thermoelectric performance.The multiple close-to-degenerate valence bands in the electronic band structure…

cond-mat.mes-hall2016★ 105 cited

Field-effect transistors of high-mobility few-layer SnSe

Chenglei Guo, Zhen Tian, Yanjun Xiao +2

We report the transport properties of mechanically exfoliated few-layer SnSe flakes, whose mobility is found with four probe measurements to be ~ 85 cmVs…