2 papers
cond-mat.mtrl-sci2018
Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the () Si-face and () C-face by using a new Si-O-C interatomic potential
So Takamoto, Takahiro Yamasaki, Takahisa Ohno +3
Silicon carbide (SiC) is an attractive semiconductor material for applications in power electronic devices. However, fabrication of a high-quality SiC/SiO interface has been…
cond-mat.mtrl-sci2018
Atomistic mechanism of graphene growth on SiC substrate: Large-scale molecular dynamics simulation based on a new charge-transfer bond-order type potential
So Takamoto, Takahiro Yamasaki, Jun Nara +4
Thermal decomposition of silicon carbide is a promising approach for the fabrication of graphene. However, the atomistic growth mechanism of graphene remains unclear. This paper de…