Robust midgap states in band-inverted junctions under electric and magnetic fields

A. Diaz-Fernandez, N. del Valle, F. Dominguez-Adame

Several IV-VI semiconductor compounds made of heavy atoms, such as Pb${}_{1-x}$Sn${}_x$Te, may undergo band-inversion at the $L$ point of the Brillouin zone upon variation of their c…