collaborators

1 paper

cond-mat.mes-hall2018

Strongly correlated proton-doped perovskite nickelate memory devices

Koushik Ramadoss, Fan Zuo, Yifei Sun +8

We demonstrate memory devices based on proton doping and re-distribution in perovskite nickelates (RNiO3, {R=Sm,Nd}) that undergo filling-controlled Mott transition. Switching spee…