322 citations · 1.1k across the 16 of their papers we have counts for
16 papers
Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
E. Icking, L. Banszerus, F. Wörtche +11
The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, inclu…
Impact of thermal annealing on graphene devices encapsulated in hexagonal boron nitride
S. Engels, B. Terrés, F. Klein +6
We present a thermal annealing study on single-layer and bilayer (BLG) graphene encapsulated in hexagonal boron nitride. The samples are characterized by electron transport and Ram…
High mobility dry-transferred CVD bilayer graphene
Michael Schmitz, Stephan Engels, Luca Banszerus +4
We report on the fabrication and characterization of high-quality chemical vapor-deposited (CVD) bilayer graphene (BLG). In particular, we demonstrate that CVD-grown BLG can mechan…
Ballistic transport exceeding 28 μm in CVD grown graphene
Luca Banszerus, Michael Schmitz, Stephan Engels +5
We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are…
Back action of graphene charge detectors on graphene and carbon nanotube quantum dots
C. Volk, S. Engels, C. Neumann +1
We report on devices based on graphene charge detectors (CDs) capacitively coupled to graphene and carbon nanotube quantum dots (QDs). We focus on back action effects of the CD on…
Limitations to Carrier Mobility and Phase-Coherent Transport in Bilayer Graphene
S. Engels, B. Terrés, A. Epping +5
We present transport measurements on high-mobility bilayer graphene fully encapsulated in hexagonal boron nitride. We show two terminal quantum Hall effect measurements which exhib…
Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices
Nuno J. G. Couto, Davide Costanzo, Stephan Engels +6
We have performed systematic investigations of transport through graphene on hexagonal boron nitride (hBN) substrates, together with confocal Raman measurements and a targeted theo…
Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields
A. Epping, S. Engels, C. Volk +4
We report on the fabrication and electrical characterisation of etched graphene single electron transistors (SETs) of various sizes on hexagonal boron nitride (hBN) in high magneti…
Etched graphene quantum dots on hexagonal boron nitride
S. Engels, A. Epping, C. Volk +6
We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a stat…
Graphene-based charge sensors
C. Neumann, C. Volk, S. Engels +1
We discuss graphene nanoribbon-based charge sensors and focus on their functionality in the presence of external magnetic fields and high frequency pulses applied to a nearby gate…
Probing relaxation times in graphene quantum dots
Christian Volk, Christoph Neumann, Sebastian Kazarski +5
Graphene quantum dots are attractive candidates for solid-state quantum bits. In fact, the predicted weak spin-orbit and hyperfine interaction promise spin qubits with long coheren…
Dielectric screening of the Kohn anomaly of graphene on hexagonal boron nitride
F. Forster, A. Molina-Sanchez, S. Engels +5
Kohn anomalies in three-dimensional metallic crystals are dips in the phonon dispersion that are caused by abrupt changes in the screening of the ion-cores by the surrounding elect…
Transport in coupled graphene-nanotube quantum devices
S. Engels, P. Weber, B. Terrés +6
We report on the fabrication and characterization of all-carbon hybrid quantum devices based on graphene and single-walled carbon nanotubes. We discuss both, carbon nanotube quantu…
Charge detection in a bilayer graphene quantum dot
Stefan Fringes, Christian Volk, Caroline Norda +5
We show measurements on a bilayer graphene quantum dot with an integrated charge detector. The focus lies on enabling charge detection with a 30 nm wide bilayer graphene nanoribbon…
Tunable capacitive inter-dot coupling in a bilayer graphene double quantum dot
Stefan Fringes, Christian Volk, Bernat Terrés +4
We report on a double quantum dot which is formed in a width-modulated etched bilayer graphene nanoribbon. A number of lateral graphene gates enable us to tune the quantum dot ener…
Electronic Excited States in Bilayer Graphene Double Quantum Dots
Christian Volk, Stefan Fringes, Bernat Terrés +4
We report tunneling spectroscopy experiments on a bilayer graphene double quantum dot device that can be tuned by all-graphene lateral gates. The diameter of the two quantum dots a…