2 papers
cond-mat.mtrl-sci2018
k-Space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures
L. L. Lev, I. O. Maiboroda, M. -A. Husanu +10
Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics,…
cond-mat.mtrl-sci2017
Growth of AlGaN under the conditions of significant gallium evaporation: phase separation and enhanced lateral growth
I. O. Mayboroda, A. A. Knizhnik, Yu. V. Grishchenko +5
Growth kinetics of AlGaN in NH3 MBE under significant Ga desorption was studied. It was found that the addition of gallium stimulates 2D growth and provides better morphology of fi…