Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids

Youcef A. Bioud, Abderraouf Boucherif, Etienne Paradis +3

A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treate…