activity
20162026
most citedStable and scalable metallic phase on MoS2 using forming-gas microwave plasma

61 citations · 174 across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.mtrl-sci2026

Topological spin-texture transitions in van der Waals magnets revealed by X-ray Fourier transform holography

Sourav Chowdhury, Soumyaranjan Dash, Michael Schneider +14

Nontrivial topological spin-textures, such as skyrmions, merons, bimerons, and skyrmioniums, are envisioned as robust building blocks for future memory and logic devices. Controlla…

cond-mat.mes-hall2025

Active Noise Reduction in Si/SiGe Gated Quantum Dots

Rajat Bharadwaj, Parvathy Gireesan, Harikrishnan Sundaresan +5

Solid-state quantum technologies such as quantum dot qubits and quantum electrical metrology circuits rely on quantum phenomena at ultra-low energies, making them highly sensitive…

cond-mat.mes-hall2025

Density-driven scattering and valley splitting in undoped Si/SiGe two-dimensional electron system

Lucky Donald Lyngdoh Kynshi, Umang Soni, Chithra H Sharma +7

Undoped Si-SiGe two-dimensional electron gas (2DEG) provide an ideal platform for hosting quantum-dot spin-qubits owing enhanced spin dephasing times and compatibility with standar…

cond-mat.mes-hall2025

Refining Au/Sb alloyed ohmic contacts in undoped Si/SiGe strained quantum wells

LuckyDonald L Kynshi, Umang Soni, Chithra H Sharma +2

Shallow undoped Si/SiGe quantum wells are the leading platforms for hosting quantum processors based on spin-qubits. The ohmic contacts to the electron gas in these systems are acc…

cond-mat.mes-hall2024★ 1 cited

Resistively detected electron spin resonance and g-factor in few-layer exfoliated MoS2 devices

Chithra H. Sharma, Appanna Parvangada, Lars Tiemann +3

MoS2 has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the g-factor of M…

cond-mat.mes-hall2023★ 3 cited

Addressing the spin-valley flavors in moir'e mini-bands of MoS2

Chithra H. Sharma, Marta Prada, Jan-Hendrik Schmidt +6

The physics of moir'e superlattices and the resulting formation of mini-bands in van der Waals materials have opened up an exciting new field in condensed matter physics. These sys…

cond-mat.mes-hall2021★ 42 cited

Acoustically Induced Giant Synthetic Hall Voltages in Graphene

Pai Zhao, Chithra H. Sharma, Renrong Liang +7

Any departure from graphene's flatness leads to the emergence of artificial gauge fields that act on the motion of the Dirac fermions through an associated pseudomagnetic field. He…

cond-mat.mes-hall2021

Electron-Spin-Resonance in a proximity-coupled MoS2/Graphene van-der-Waals heterostructure

Chithra H. Sharma, Pai Zhao, Lars Tiemann +4

Coupling graphene's excellent electron and spin transport properties with higher spin-orbit coupling material allows tackling the hurdle of spin manipulation in graphene, due to th…

cond-mat.mes-hall2018★ 44 cited

2D superconductivity and vortex dynamics in 1T-MoS2

Chithra H. Sharma, Ananthu P. Surendran, Sangeeth S. Varma +1

Two-dimensional (2D) superconductivity is a fascinating phenomenon packed with rich physics and wide technological application. The vortices and their dynamics arising from classic…

cond-mat.mes-hall2018★ 61 cited

Stable and scalable metallic phase on MoS2 using forming-gas microwave plasma

Chithra H. Sharma, Ananthu P. Surendran, Abin Varghese +1

Monolithic realization of metallic 1T and semiconducting 2H polymorphic phases makes MoS2 a potential candidate for future microelectronic circuits. Though co-existence of these ph…

cond-mat.mes-hall2016★ 23 cited

Topography preserved microwave plasma etching for top-down layer engineering in MoS2 and other van der Waals materials

Abin Varghese, Chithra H. Sharma and, Madhu Thalakulam

A generic and universal layer engineering strategy for van der Waals (vW) materials, scalable and compatible with the current semiconductor technology is of paramout importance in…

cond-mat.mes-hall2016

Split-gate point-contact for channelizing electron transport on MoS2/h-BN hybrid structures

Chithra H. Sharma, Madhu Thalakulam

Electrostatically defined nanoscale devices on two-dimensional semiconductor heterostructures are the building blocks of various quantum electrical circuits. Owing to its atomicall…