Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs under Mist Exposure

M. Fátima Romero, Alberto Boscá, Jorge Pedrós +4

The effect of a two dimensional (2D) graphene layer (GL) on top of the silicon nitride (SiN) passivation layer of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility tra…