P. Zhai

activity

20182026

β

-Ga

_{2}

_{3}

Schottky barrier diode under swift heavy ion irradiation

51 citations · 100 across the 4 of their papers we have counts for

collaborators

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3 papers · 1 filter

cond-mat.mtrl-sci2026

A Neuroevolution Potential for Gallium Oxide: Accurate and Efficient Modeling of Polymorphism and Swift Heavy-Ion Irradiation

Yaohui Gu, Binbo Li, Lingyang Jiang +6

Gallium oxide (Ga2O3) is a wide-bandgap semiconductor with promising applications in high-power and high-frequency electronics. However, its complex polymorphic nature poses substa…

cond-mat.mtrl-sci2023★ 18 cited

Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

Xiaoyu Yan, Pengfei Zhai, Chen Yang +8

Single-event burnout and single-event leakage current (SELC) in SiC power devices induced by heavy ions severely limit their space application, and the underlying mechanism is stil…

cond-mat.mtrl-sci2021★ 51 cited

Degradiation of $β$ -Ga $_{2}$ O $_{3}$ Schottky barrier diode under swift heavy ion irradiation

Wen-Si Ai, Jie Liu, Qian Feng +8

The electrical characteristics and microstructures of $β$ -Ga $_{2}$ O $_{3}$ Schottky barrier diode (SBD) devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It…

A Neuroevolution Potential for Gallium Oxide: Accurate and Efficient Modeling of Polymorphism and Swift Heavy-Ion Irradiation

Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

Degradiation of β-Ga2​O3​ Schottky barrier diode under swift heavy ion irradiation

Degradiation of $β$ -Ga $_{2}$ O $_{3}$ Schottky barrier diode under swift heavy ion irradiation