90 citations · 158 across the 6 of their papers we have counts for
6 papers
Charge spill-out and work function of few-layer graphene on SiC(0001)
O. Renault, A. M. Pascon, H. Rotella +7
We report on the charge spill-out and work function of epitaxial few-layer graphene on 6H-SiC(0001). Experiments from high-resolution, energy-filtered X-ray photoelectron emission…
Interpretation of monoclinic hafnia valence electron energy loss spectra by TDDFT
Linda Hung, Cyril Guedj, Nicolas Bernier +3
We present the valence electron energy-loss spectrum and the dielectric function of monoclinic hafnia (m-HfO) obtained from time-dependent density-functional theory (TDDFT) pre…
Structural Properties and Thermodynamics of Hafnium sub-oxides in RRAM
Philippe Blaise, Boubacar Traore
We study the structural and electronic properties of various hafnium sub-oxides HfzO from z = 9 to z = 0.5, by ab initio simulation using Density Functional Theory. The stability o…
Evidence for anisotropic dielectric properties of monoclinic hafnia using high-resolution TEM valence electron energy-loss spectroscopy and ab initio time-dependent density-functional theory
Cyril Guedj, Linda Hung, Alberto Zobelli +3
The effect of nanocrystal orientation on the energy loss spectra of monoclinic hafnia (m-HfO) is measured by high resolution transmission electron microscopy (HRTEM) and valenc…
Prediction of semi-metallic tetragonal Hf2O3 and Zr2O3 from first-principles
Kan-Hao Xue, Philippe Blaise, Leonardo R. C. Fonseca +1
A tetragonal phase is predicted for Hf2O3 and Zr2O3 using density functional theory. Starting from atomic and unit cell relaxations of substoichiometric monoclinic HfO2 and ZrO2, s…
Ab initio calculation of Effective Work Functions for a TiN/HfO2/SiO2/Si transistor stack
Pierre-Yves Prodhomme, Fabien Fontaine-Vive, Abraam vand Der Geest +2
Ab initio techniques are used to calculate the effective work function (Weff) of a TiN/HfO2/SiO2/Si stack representing a metal-oxide-semiconductor (MOS) transistor gate taking into…