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I. Baranowski

3 papers hereh-index 14603 citations19 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author3

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • physics.app-ph2
  • cond-mat.mtrl-sci1
same name
  • I. Baranowski — 1 paper, h 2

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

collaborators

3 papers

physics.app-ph2018

Demonstration of nonpolar m-plane vertical GaN-on-GaN p-n power diodes grown on free-standing GaN substrates

H. Fu, X. Zhang, K. Fu +10

This work demonstrates the first nonpolar vertical GaN on GaN pn power diodes grown on m-plane free standing substrates by MOCVD. The SEM and HRXRD results showed the good crystal…

physics.app-ph2017

Characterizations of the Nonlinear Optical Properties for (010) and (-201) Beta-phase Gallium Oxide

Hong Chen, Houqiang Fu, Xuanqi Huang +4

We report, for the first time, the characterizations on optical nonlinearities of beta-phase gallium oxide (\b{eta}-Ga2O3), where both (010) \b{eta}-Ga2O3 and (-201) \b{eta}-Ga2O3…

cond-mat.mtrl-sci2017

Effect of crystalline anisotropy on vertical (-201) and (010) beta-Ga2O3 Schottky barrier diodes on EFG single-crystal substrates

Houqiang Fu, Hong Chen, Xuanqi Huang +4

Vertical (-201) and (010) beta-Ga2O3 Schottky barrier diodes (SBDs) were fabricated on single-crystal substrates grown by edge-defined film-fed growth (EFG) method. High resolution…

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