537 citations · 1.7k across the 14 of their papers we have counts for
14 papers
Intralayer Negative Poisson's Ratio in Two-Dimensional Black Arsenic by Strain Engineering
Jingjing Zhang, Weihan Zhang, Leining Zhang +9
Negative Poisson's ratio as the anomalous characteristic generally exists in artificial architectures, such as re-entrant and honeycomb structures. The structures with negative Poi…
Discovery and construction of surface kagome electronic states induced by p-d electronic hybridization
Li Huang, Xianghua Kong, Qi Zheng +17
Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, we show surface kagome electronic states…
Layer sliding and twisting induced electronic transitions in correlated magnetic 1T-NbSe2 bilayers
Jiaqi Dai, Jingsi Qiao, Cong Wang +9
Correlated two-dimensional (2D) layers, like 1T-phases of TaS2, TaSe2 and NbSe2, exhibit rich tunability through varying interlayer couplings, which promotes the understanding of e…
Layer-by-layer growth of bilayer graphene single-crystals enabled by self-transmitting catalytic activity
Zhihong Zhang, Linwei Zhou, Zhaoxi Chen +23
Direct growth of large-area vertically stacked two-dimensional (2D) van der Waal (vdW) materials is a prerequisite for their high-end applications in integrated electronics, optoel…
Strain Effect on Air-Stability of Monolayer CrSe2
Jun Chen, Linwei Zhou, Nanshu Liu +4
The discovery of two dimensional (2D) magnetic materials has brought great research value for spintronics and data storage devices. However, their air-stability as well as the oxid…
Charge tunable structural phase transitions in few-layer tellurium: a step toward building mono-elemental devices
Cong Wang, Jingsi Qiao, Yuhao Pan +5
Recently, a covalent-like quasi-bonding was unveiled for the inter-chain interaction in a promising semiconductor, few-layer Tellurium. Such quasi-bond offers comparable bond lengt…
Few-layer Tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties
Jingsi Qiao, Yuhao Pan, Feng Yang +3
Few-layer Tellurium, an elementary semiconductor, succeeds most of striking physical properties that black phosphorus (BP) offers and could be feasibly synthesized by simple soluti…
Layer- and doping-tunable long range ferromagnetic order-ing in two-dimensional CrS2
Cong Wang, Xieyu Zhou, Yuhao Pan +4
Interlayer coupling is of vital importance for manipulating physical properties, e.g. electronic bandgap, in two-dimensional materials. However, tuning magnetic proper-ties in thes…
Deriving phosphorus atomic chain from few-layer black phosphorus
Zhangru Xiao, Jingsi Qiao, Wanglin Lu +6
Phosphorus atomic chains, the utmost-narrow nanostructures of black phosphorus (BP), are highly relevant to the in-depth development of BP into one-dimensional (1D) regime. In this…
Probing Carrier Transport and Structure-property Relationship of Highly Ordered Organic Semiconductors at Two-dimensional Limit
Yuhan Zhang, Jingsi Qiao, Si Gao +14
One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two-dimensionally in the…
Polytypism and Unexpected Strong Interlayer Coupling of two-Dimensional Layered ReS2
Xiao-Fen Qiao, Jiang-Bin Wu, Lin-Wei Zhou +7
The anisotropic two-dimensional (2D) van der Waals (vdW) layered materials, with both scientific interest and potential application, have one more dimension to tune the properties…
Degradation of Black Phosphorus (BP): The Role of Oxygen and Water
Yuan Huang, Jingsi Qiao, Kai He +10
Black phosphorus (BP) has attracted significant interest as a monolayer or few-layer material with extraordinary electrical and optoelectronic properties. However, degradation in a…
Interlayer electronic hybridization leads to exceptional thickness-dependent vibrational properties in few-layer black phosphorus
Zhi-Xin Hu, Xianghua Kong, Jingsi Qiao +2
Stacking two-dimensional (2D) materials into multi-layers or heterostructures, known as van der Waals (vdW) epitaxy, is an essential degree of freedom for tuning their properties o…
Correlation of interfacial bonding mechanism and equilibrium conductance of molecular junctions
Zhanyu Ning, Jingsi Qiao, Wei Ji +1
We report theoretical investigations on the role of interfacial bonding mechanism and its resulting structures to quantum transport in molecular wires. Two bonding mechanisms for t…