177 citations · 224 across the 3 of their papers we have counts for
3 papers
High-performance two-dimensional p-type transistors based on GaSe layers: an ab-initio study
Agnieszka Kuc, Teresa Cusati, Elias Dib +5
Ultrascaled GaSe field effect transistors are investigated through ab initio calculations. GaSe monolayers, 3 nm long, exhibit excellent performance with reduced short-channel effe…
Spin polarization in SCC-DFTB
Patrick Melix, Augusto Faria Oliveira, Robert Rüger +1
We evaluate the performance of spin-polarized DFTB within the SCC-DFTB (also known as DFTB2) model. The method has been implemented in the ADF modeling suite. We briefly review how…
Electromechanics in MoS2 and WS2: nanotubes vs. monolayers
Mahdi Ghorbani-Asl, Nourdine Zibouche, Mohammad Wahiduzzaman +3
The transition-metal dichalcogenides (TMD) MoS2 and WS2 show remarkable electromechanical properties. Strain modifies the direct band gap into an indirect one, and substantial stra…