J. Dallesasse

collaborators

3 papers

physics.optics2021

Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001)

Pankul Dhingra, Patrick Su, Brian D. Li +6

Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of…

cond-mat.mes-hall2021

Modeling Photocurrent Spectra of In $_{0.91}$ Ga $_{0.09}$ N/In $_{0.4}$ Ga $_{0.6}$ N Disk-in-Wire Photodiode on Silicon for $1.3$ $μ$ m $-$ $1.55$ $μ$ m Operation

Fu-Chen Hsiao, Arnab Hazari, Pallab Bhattacharya +2

This work reports comprehensive theoretical modeling of photocurrent spectra generated by an In $_{0.91}$ Ga $_{0.09}$ N/In $_{0.4}$ Ga $_{0.6}$ N disk-in-wire photodiode. The strain distr…

cond-mat.mtrl-sci2018

Effective bond-orbital model of III-nitride wurtzite structures based on modified interaction parameters of zinc-blende structures

Fu-Chen Hsiao, Ching-Tarng Liang, Yia-Chung Chang +1

A simple theoretical method for deducing the effective bond-orbital model (EBOM) of III-nitride wurtzite (WZ) semiconductors is presented. In this model, the interaction parameters…

Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001)

Modeling Photocurrent Spectra of In0.91​Ga0.09​N/In0.4​Ga0.6​N Disk-in-Wire Photodiode on Silicon for 1.3 μm − 1.55 μm Operation

Effective bond-orbital model of III-nitride wurtzite structures based on modified interaction parameters of zinc-blende structures

Modeling Photocurrent Spectra of In $_{0.91}$ Ga $_{0.09}$ N/In $_{0.4}$ Ga $_{0.6}$ N Disk-in-Wire Photodiode on Silicon for $1.3$ $μ$ m $-$ $1.55$ $μ$ m Operation