4 papers
Self-Heating and Radiation Hardness Studies of 3nm GAA-FET-Based SRAM with Different Substrate Isolation Techniques
Albert Lu, Junipero Verbeke, Phil Oldiges +2
In this work, 3D full-domain 3 nm gate-all-around field-effect transistor (GAA-FET) static random access memories (SRAMs) with various substrate isolation techniques are simulated…
Simulation of Two-qubit Gate Variability and Fidelity of Spin Qubits Built on Nanosheet Technology
Trung Nguyen, Sarah Dweik, Hiu Yung Wong
Silicon spin qubits are promising for large-scale quantum-computer integration because they can fully leverage the well-developed semiconductor infrastructure. However, the low fid…
Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design
Albert Lu, Reza Arghavani, Hiu Yung Wong
In this paper, using 3D Technology Computer-Aided-Design (TCAD) simulations, we show that it is possible to design a static random-access memory (SRAM) using gate-all-around field-…
Analysis of a 3D Integrated Superconducting Quantum Chip Structure
James Saslow, Hiu Yung Wong
This work presents a combined analytical and simulation-based study of a 3D-integrated quantum chip architecture. We model a flip-chip-inspired structure by stacking two supercondu…