most citedEngineering strain relaxation of GeSn epilayers on Ge/Si(001) substrates

16 citations · 41 across the 3 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

1 paper · 1 filter

cond-mat.mtrl-sci2018★ 15 cited

Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111) /Si (111) heterostructures

Krista R Khiangte, Jaswant S Rathore, Sudipta Das +5

Molecular beam epitaxy of Ge (111) thin films on epitaxial-Gd2O3/Si(111) substrates is reported, along with a systematic investigation of the evolution of Ge growth, and structural…