62 citations · 73 across the 2 of their papers we have counts for
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cond-mat.mes-hall2018★ 11 cited
Temperature and electric field dependence of spin relaxation in graphene on SrTiO
Si Chen, Roald Ruiter, Vikramaditya Mathkar +2
The theoretically predicted intrinsic spin relaxation time of up to 1 in graphene along with extremely high mobilities makes it a promising material in spintronics. In spite o…
cond-mat.mes-hall2014★ 62 cited
Temperature dependent transport characteristics of graphene/n-Si diodes
S. Parui, R. Ruiter, P. J. Zomer +3
Realizing an optimal Schottky interface of graphene on Si is challenging, as the electrical transport strongly depends on the graphene quality and the fabrication processes. Such i…