most citedLocating the avalanche structure and the origin of breakdown generating charge carriers in silicon photomultipliers by using the bias dependent breakdown probability

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physics.ins-det2018★ 7 cited

Locating the avalanche structure and the origin of breakdown generating charge carriers in silicon photomultipliers by using the bias dependent breakdown probability

Adam Nepomuk Otte, Thanh Nguyen, Joel Stansbury

We present characterization results of two silicon photomultipliers; the Hamamatsu LVR-6050-CN and the Ketek PM3325 WB. With our measurements of the bias dependence of the breakdow…