2 papers
cond-mat.mtrl-sci2018
Large-scale defects hidden inside a topological insulator grown onto a 2D substrate
Danielle Reifsnyder Hickey, Ryan J. Wu, Joon Sue Lee +7
Topological insulator (TI) materials are exciting candidates for integration into next-generation memory and logic devices because of their potential for efficient, low-energy-cons…
cond-mat.mtrl-sci2018
An Inside Look at the Ti-MoS2 Contact in Ultra-thin Field Effect Transistor with Atomic Resolution
Ryan J. Wu, Sagar Udyavara, Rui Ma +5
Two-dimensional molybdenum disulfide (MoS2) is an excellent channel material for ultra-thin field effect transistors. However, high contact resistance across the metal-MoS2 interfa…