most citedThermally Oxidized Two-dimensional TaS2 as a High-\k{appa} Gate Dielectric for MoS2 Field-Effect Transistors

6 citations · 6 across the 1 of their papers we have counts for

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1 paper

physics.app-ph2018★ 6 cited

Thermally Oxidized Two-dimensional TaS2 as a High-\k{appa} Gate Dielectric for MoS2 Field-Effect Transistors

Bhim Chamlagain, Qingsong Cui, Sagar Paudel +3

We report a new approach to integrating high-\k{appa} dielectrics in both bottom- and top-gated MoS2 field-effect transistors (FETs) through thermal oxidation and mechanical assemb…