Low temperature (Ts/Tm < 0.1) epitaxial growth of HfN/MgO(001) via reactive HiPIMS with metal-ion synchronized substrate bias

Michelle Marie S. Villamayor, Julien Keraudy, Tetsuhide Shimizu +6

Low-temperature epitaxial growth of refractory transition-metal nitride thin films by means of physical vapor deposition has been a recurring theme in advanced thin-film technology…