2 papers
cond-mat.mtrl-sci2022
Consideration of the Intricacies Inherent in Molecular Beam Epitaxy of the NaCl/GaAs System
Brelon J. May, Jae Jin Kim, Patrick Walker +4
The high cost of substrates for III-V growth can be cost limiting for technologies that require large semiconductor areas. Thus, being able to separate device layers and reuse the…
physics.app-ph2018
Enabling III-V-based optoelectronics with low-cost dynamic hydride vapor phase epitaxy
John Simon, Kevin L. Schulte, Kelsey Horowitz +3
Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials have improved perform…