341 citations · 417 across the 6 of their papers we have counts for
6 papers
Fast Homoepitaxy on (100) \b{eta}-Ga2O3 Substrates with Large Grown-In Offcut
M. Brooks Tellekamp, Drew Haven, David Joyce +7
The choice of crystalline orientation and offcut angle is non-trivial for low-symmetry , where anisotropy impacts bulk and thin film synthesis, material pr…
Suppression of Phase Separation in AlGaInAs Compositionally Graded Buffers for 1550 nm Photovoltaic Converters on GaAs
Kevin L. Schulte, John F. Geisz, Harvey L. Guthrey +3
We investigate strategies to suppress phase separation and reduce threading dislocation densities (TDD) in AlGaInAs compositionally graded buffers (CGBs) that span the lattice cons…
Sub-0.6 eV Inverted Metamorphic GaInAs Cells Grown on InP and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion
Kevin L. Schulte, Daniel J. Friedman, Titilope Dada +6
We present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. The compositionally graded buffers in these devices…
Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations
Malik Hassanaly, Hariswaran Sitaraman, Kevin L. Schulte +5
Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cel…
Thermophotovoltaic Efficiency of 40%
Alina LaPotin, Kevin L. Schulte, Myles A. Steiner +10
We report the fabrication and measurement of thermophotovoltaic (TPV) cells with efficiencies of >40%, which is a record high TPV efficiency and the first experimental demonstratio…
Enabling III-V-based optoelectronics with low-cost dynamic hydride vapor phase epitaxy
John Simon, Kevin L. Schulte, Kelsey Horowitz +3
Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials have improved perform…