4 citations · 4 across the 1 of their papers we have counts for
2 papers
physics.app-ph2021★ 4 cited
Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations
Malik Hassanaly, Hariswaran Sitaraman, Kevin L. Schulte +5
Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cel…
physics.app-ph2018
Enabling III-V-based optoelectronics with low-cost dynamic hydride vapor phase epitaxy
John Simon, Kevin L. Schulte, Kelsey Horowitz +3
Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials have improved perform…