77 citations · 208 across the 4 of their papers we have counts for
5 papers
Extreme-Band-Gap Semiconductors with Shallow Dopants and Mobile Carriers
Sieun Chae, Nocona Sanders, Kelsey A. Mengle +8
The conventional distinction between semiconductors and insulators is often based on the magnitude of the band gap, with materials exhibiting gaps wider than 3 eV typically classif…
Increasing the mobility and power-electronics figure of merit of AlGaN with atomically thin AlN/GaN digital-alloy superlattices
Nick Pant, Woncheol Lee, Nocona Sanders +1
Alloy scattering in random AlGaN alloys drastically reduces the electron mobility and therefore the power-electronics figure of merit. As a result, Al compositions greater than 75%…
Perspective: Towards the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: the case of rutile GeO
S. Chae, K. A. Mengle, K. Bushick +8
Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric…
Phonon- and defect-limited electron and hole mobility of diamond and cubic boron nitride: a critical comparison
Nocona Sanders, Emmanouil Kioupakis
Diamond and cBN are two of the most promising ultra-wide-band-gap (UWBG) semiconductors for applications in high-power high-frequency electronic devices. Yet despite extensive stud…
Band structure and carrier effective masses of boron arsenide: effects of quasiparticle and spin-orbit coupling corrections
Kyle Bushick, Kelsey Mengle, Nocona Sanders +1
We determine the fundamental electronic and optical properties of the high-thermal-conductivity III-V semiconductor boron arsenide (BAs) using density functional and many body pert…