3 papers
physics.ins-det2025
Simulation of charge transport at the surface of planar silicon sensors
Ingo Bloch, Ben Bruers, Heiko Lacker +3
Radiation-hard silicon sensors used in high-energy physics require a high electric field and are susceptible to surface breakdown. This study aims to improve the understanding of t…
physics.ins-det2024
TCAD Simulations of Humidity-Induced Breakdown of Silicon Sensors
Ilona-Stefana Ninca, Ingo Bloch, Ben Bruers +12
The breakdown voltage of silicon sensors is known to be affected by the ambient humidity. To understand the sensor's humidity sensitivity, Synopsys TCAD was used to simulate n-in-p…
physics.ins-det2018
Mapping the depleted area of silicon diodes using a micro-focused X-ray beam
Luise Poley, Andrew Blue, Ingo Bloch +14
For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker. The ATLAS Inner Tracker will be an all-silic…