activity
20142023
most citedBarrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport

49 citations · 143 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2023★ 30 cited

Quantum geometry quadrupole-induced third-order nonlinear transport in antiferromagnetic topological insulator MnBi2Te4

Hui Li, Chengping Zhang, Chengjie Zhou +7

The study of quantum geometry effects in materials has been one of the most important research directions in recent decades. The quantum geometry of a material is characterized by…

cond-mat.mes-hall2022★ 2 cited

Hexagonal network of photocurrent enhancement in few-layer graphene/InGaN quantum dot junctions

Guanghui Cheng, Zijing Jin, Chunyu Zhao +3

Strain in two-dimensional (2D) materials has attracted particular attention owing to the remarkable modification of electronic and optical properties. However, emergent electromech…

physics.app-ph2018★ 49 cited

Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport

Qin Zhou, Honglei Wu, Hui Li +9

An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport. The Ni/Au-AlN SBD features…

cond-mat.mes-hall2018★ 34 cited

Interfacial bound exciton state in a hybrid structure of monolayer WS2 and InGaN quantum dots

Guanghui Cheng, Baikui Li, Chunyu Zhao +4

Van der Waals heterostructures usually formed using atomic thin transition metal dichalcogenides (TMDCs) with a direct bandgap in the near-infrared to the visible range are promisi…

cond-mat.mes-hall2014★ 28 cited

Tunable interaction-induced localization of surface electrons in antidot nanostructured Bi2Te3 thin films

Hong-Chao Liu, Hai-Zhou Lu, Hong-Tao He +7

Recently, a logarithmic decrease of conductivity has been observed in topological insulators at low temperatures, implying a tendency of localization of surface electrons. Here, we…