Pengfei Guo

most citedImproving the performance of Ge

_{2}

_{2}

_{5}

materials via nickel doping: Towards RF-compatible phase-change devices

42 citations · 60 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2018★ 42 cited

Improving the performance of Ge $_{2}$ Sb $_{2}$ Te $_{5}$ materials via nickel doping: Towards RF-compatible phase-change devices

Pengfei Guo, Joshua A. Burrow, Gary A. Sevison +6

High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conducti…

cond-mat.mtrl-sci2016★ 18 cited

Energetic disorder induced leakage current in organic bulk heterojunction solar cells: comprehending the ultra-high open circuit voltage loss at low temperatures

Wenchao Yang, Yongsong Luo, Pengfei Guo +2

In organic bulk heterojunction solar cells, the open circuit voltage ( $V_{oc}$ ) suffers from an ultra-high loss at low temperatures. In this work we investigate the origin o…

Improving the performance of Ge2​Sb2​Te5​ materials via nickel doping: Towards RF-compatible phase-change devices

Energetic disorder induced leakage current in organic bulk heterojunction solar cells: comprehending the ultra-high open circuit voltage loss at low temperatures

Improving the performance of Ge $_{2}$ Sb $_{2}$ Te $_{5}$ materials via nickel doping: Towards RF-compatible phase-change devices