Two components of donor-acceptor recombination in compensated semiconductors. Analytical model of spectra in presence of electrostatic fluctuations

N. A. Bogoslovskiy, P. V. Petrov, Yu. L. Ivanov K. D. Tsendin +1

We report numerical and analytical studies of the donor-acceptor recombination in compensated semiconductors. Our calculations take into account random electric fields of charged i…