79 citations · 191 across the 12 of their papers we have counts for
12 papers
Complete Raman Tensor Determination in Birefringent -GaO by Single-Stage Hyperspectral Analysis of Polarization Angle-Resolved Raman Spectra
Hans Tornatzky, Jonas Rose, Moritz Meißner +5
The low symmetry of the monoclinic phase of GaO leads to pronounced optical anisotropy and, consequently, to birefringence, which strongly affects the Raman response. Becau…
Lattice dynamics and complete polarization analysis of Raman-active modes in LaInO
Jonas Rose, Hai Nguyen, Moritz Meißner +7
In this study, we present a comprehensive analysis of the Raman active phonon modes in orthorhombic LaInO based on a combination of polarization-angle resolved Raman spectrosco…
Microscopic Origin of Temperature-Dependent Anisotropic Heat Transport in Ultrawide-Bandgap Rutile GeO2
Pouria Emtenani, Marta Loletti, Felix Nippert +7
Ultrawide-bandgap rutile GeO2 is emerging as a promising semiconductor for power electronics, where efficient heat dissipation is essential to suppress self-heating and ensure devi…
Molecular Beam Epitaxy of AlScN Nanowires: Towards Group-III Nitride Piezoelectric Nanogenerators with Enhanced Response
Adriano Notarangelo, Rudeesun Songmuang, Mostafa Saleh +10
We study the molecular beam epitaxy of self-assembled AlScN nanowires on conductive TiN layers and demonstrate their application in piezoelectric na…
Sonication-assisted liquid phase exfoliation of two-dimensional CrTe under inert conditions
Kevin Synnatschke, Narine Moses Badlyan, Angelika Wrzesińska +8
Liquid phase exfoliation (LPE) has been used for the successful fabrication of nanosheets from a large number of van der Waals materials. While this allows to study fundamental cha…
In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge
Wenshan Chen, Kingsley Egbo, Hans Tornatzky +3
Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronics devices while quartz-like GeO2 shows piezoelectric properties. To exp…
Spin dependent charge transfer in MoSe2/hBN/Ni hybrid structures
H. Tornatzky, C. Robert, P. Renucci +10
We present magneto-photoluminescence measurements in a hybrid 2D semiconductor/ferromagnetic structure consisting of MoSe2/hBN/Ni. When the Nickel layer is magnetized, we observe c…
Large perpendicular magnetic anisotropy in Ta/CoFeB/MgO on full coverage monolayer MoS2 and first principle study of its electronic structure
Ziqi Zhou, Paul Marcon, Xavier Devaux +18
Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for developing spin optoelectronic devices on 2D materials working at room temperature (RT) w…
Spin/Valley pumping of resident electrons in WSe2 and WS2 monolayers
Cedric Robert, Sangjun Park, Fabian Cadiz +14
Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excita…
Isotopic study of Raman active phonon modes in -GaO
Benjamin M. Janzen, Piero Mazzolini, Roland Gillen +5
Holding promising applications in power electronics, the wide band gap material gallium oxide has emerged as a vital alternative to materials like GaN and SiC. The detailed study o…
Phonon dispersion of MoS
Hans Tornatzky, Roland Gillen, Hiroshi Uchiyama +1
Transition metal dichalcogenides like MoS, MoSe, WS, and WSe have attracted enormous interest during recent years. They are van-der-Waals crystals with highly aniso…
Resonance profiles of valley polarization in single-layer MoS and MoSe
Hans Tornatzky, Anne-Marie Kaulitz, Janina Maultzsch
In this letter we present photoluminescence measurements with different excitation energies on single-layer MoS and MoSe in order to examine the resonance behavior of the c…