activity
19962018
most citedNoise in Al single electron transistors of stacked design

73 citations · 140 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2018★ 11 cited

High quality factor mechanical resonance in a silicon nanowire

D. E. Presnov, S. Kafanov, A. A. Dorofeev +4

Resonance properties of nanomechanical resonators based on doubly clamped silicon nanowires, fabricated from silicon-on-insulator and coated with a thin layer of aluminum, were exp…

cond-mat.mes-hall2000★ 53 cited

Metallic single-electron transistor without traditional tunnel barriers

V. A. Krupenin, A. B. Zorin, D. E. Presnov +2

We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electr…

cond-mat.mes-hall1999★ 1 cited

Aluminum Single Electron Transistors with Islands Isolated from a Substrate

V. A. Krupenin, D. E. Presnov, A. B. Zorin +1

The low-frequency noise figures of single-electron transistors (electrometers) of traditional planar and new stacked geometry were compared. We observed a correlation between the c…

cond-mat.mes-hall1998★ 73 cited

Noise in Al single electron transistors of stacked design

V. A. Krupenin, D. E. Presnov, M. N. Savvateev +3

We have fabricated and examined several Al single electron transistors whose small islands were positioned on top of a counter electrode and hence did not come into contact with a…

cond-mat1996★ 2 cited

Room Temperature Molecular Single-Electron Transistor

E. S. Soldatov, V. V. Khanin, A. S. Trifonov +6

A room temperature single-electron transistor based on the single cluster molecule has been demonstrated for the first time. Scanning tunneling microscope tip was used to study the…