29 citations · 55 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2018★ 29 cited
A High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF Study
Aryan Afzalian, Gerben Doornbos, Tzer-Min Shen +2
Using a tight-binding mode-space NEGF technique, we explore the essential physics, design and performance potential of the III-V core-shell (CS) nanowire (NW) heterojunction TFET.…
cond-mat.mes-hall2017★ 26 cited
An efficient tight-binding mode-space NEGF model enabling up to million atoms III-V nanowire MOSFETs and TFETs simulations
Aryan Afzalian, Tim Vasen, Peter Ramvall +1
We report the capability to simulate in a quantum mechanical tight-binding (TB) atomistic fashion NW devices featuring several hundred to millions of atoms and diameter up to 18 nm…