2 papers
cond-mat.mtrl-sci2021
A Photonic Atom Probe Analysis of the Effect of Extended and Point Defects on the Luminescence of InGaN/GaN Quantum Dots
I. Dimkou, J. Houard, N. Rochat +6
We report a correlative microscopy study of a sample containing three stacks of InGaN/GaN quantum dots (QDs) grown at different substrate temperature, each stack consisting of 3 la…
cond-mat.mtrl-sci2018
Electrical and Optical Properties of Heavily Ge-Doped AlGaN
R. Blasco, A. Ajay, E. Robin +7
We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has…