activity
20132021
most citedMagnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene

109 citations · 162 across the 4 of their papers we have counts for

collaborators

4 papers

cond-mat.mes-hall2021★ 21 cited

Tuneable spin injection in high-quality graphene with one-dimensional contacts

Victor H. Guarochico-Moreira, Jose L. Sambricio, Khalid Omari +8

Spintronics involves the development of low-dimensional electronic systems with potential use in quantum-based computation. In graphene, there has been significant progress in impr…

cond-mat.mes-hall2018★ 23 cited

Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers

Pablo U. Asshoff, Jose L. Sambricio, Sergey Slizovskiy +7

Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertica…

cond-mat.mes-hall2016★ 109 cited

Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene

P. U. Asshoff, J. L. Sambricio, A. P. Rooney +9

Graphene is hailed as an ideal material for spintronics due to weak intrinsic spin-orbit interaction that facilitates lateral spin transport and tunability of its electronic proper…

cond-mat.mes-hall2013★ 9 cited

Magnetization reversal in sub-100nm magnetic tunnel junctions with ultrathin MgO barrier biased along hard axis

J. P. Cascales, D. Herranz, J. L. Sambricio +3

We report on room temperature magnetoresistance and low frequency noise in sub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9nm) barriers. For magneti…