most citedHighly efficient optical transition between excited states in wide InGaN quantum wells

2 citations · 2 across the 2 of their papers we have counts for

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2 papers

physics.optics2025

Edge emission from 265~nm UV-C LEDs grown by MBE on bulk AlN

Shivali Agrawal, Hsin-Wei S. Huang, Debaditya Bhattacharya +6

UV-C LEDs pseudomorphically grown by MBE on bulk AlN substrates emitting at 265 nm are demonstrated. High current density up to 800 A/cm, 5 orders of on/off ratio, and low diff…

physics.app-ph2018★ 2 cited

Highly efficient optical transition between excited states in wide InGaN quantum wells

Grzegorz Muziol, Henryk Turski, Marcin Siekacz +6

There is a lack of highly efficient light emitting devices (LEDs) operating in the green spectral regime. The devices based on (In,Al)GaN show extremely high efficiencies in violet…