176 citations · 335 across the 12 of their papers we have counts for
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Unraveling energy flow mechanisms in semiconductors by ultrafast spectroscopy: Germanium as a case study
Grazia Raciti, Begoña Abad, Riccardo Dettori +8
Semiconductor materials are the foundation of modern electronics, and their functionality is dictated by the interactions between fundamental excitations occurring on (sub-)picosec…
Occurrence of the collective Ziman limit of heat transport in cubic semiconductors: scattering channels and size effects
Jelena Sjakste, Maxime Markov, Raja Sen +2
In this work, we discuss the possibility of reaching the Ziman conditions for collective heat transport in cubic bulk semiconductors, such as Si, Ge, AlAs and AlP. In natural and e…
Role of Dimensionality and Size in Controlloing the Drag Seebeck Coefficient of Doped Silicon Nanostructures: A Fundamental Understanding
Raja Sen, Nathalie Vast, Jelena Sjakste
In this theoretical study, we examine the influence of dimensionality, size reduction, and heat-transport direction on the phonon-drag contribution to the Seebeck coefficient of si…
EPIq : an open-source software for the calculation of electron-phonon interaction related properties
Giovanni Marini, Guglielmo Marchese, Gianni Profeta +5
EPIq (Electron-Phonon wannier Interpolation over k and q-points) is an open-source software for the calculation of electron-phonon interaction related properties from first princip…
When carbon impurities trigger the synthesis of alpha boron at high pressure and high temperature
Amrita Chakraborti, Yeonsoo Cho, Jelena Sjakste +5
The role of carbon in the formation of alpha boron at high pressure and high temperature (HPHT) has been investigated by combining HPHT experiments and density functional theory (D…
Boron carbide under torsional deformation: evidence of the formation of chain vacancies in the plastic regime
Amrita Chakraborti, Antoine Jay, Olivier Hardouin Duparc +4
We report a combined experimental and theoretical study of boron carbide under stress/deformation. A special rotating anvil press, the rotating tomography Paris Edinburgh cell (Rot…
Thermoelectric transport properties of silicon: Towards an ab initio approach
Z. Wang, S. Wang, S. Obukhov +4
We have combined the Boltzmann transport equation with an {\it ab initio} approach to compute the thermoelectric coefficients of semiconductors. Electron-phonon, ionized impurity,…
Breakdown of Herring's processes in cubic semiconductors for sub-terahertz longitudinal acoustic phonons
Maxime Markov, Jelena Sjakste, Nathalie Vast +3
In the present work we explain the anomalous behavior of the attenuation of the longitudinal acoustic phonon in GaAs as a function of the phonon energy in the sub-THz domain. T…
Ultrafast electrons dynamics reveal the high potential of InSe for hot carrier optoelectronics
Zhesheng Chen, Christine Giorgetti, Jelena Sjakste +9
We monitor the dynamics of hot carriers in InSe by means of two photons photoelectron spectroscopy (2PPE). The electrons excited by photons of 3.12 eV experience a manifold relaxat…
Hydrodynamic heat transport regime in bismuth: a theoretical viewpoint
Maxime Markov, Jelena Sjakste, Giuliana Barbarino +5
Bismuth is one of the rare materials in which second sound has been experimentally observed. Our exact calculations of thermal transport with the Boltzmann equation predict the occ…
Wannier interpolation of the electron-phonon matrix elements in polar semiconductors: Polar-optical coupling in GaAs
J. Sjakste, N. Vast, M. Calandra +1
We generalize the Wannier interpolation of the electron-phonon matrix elements to the case of polar-optical coupling in polar semiconductors. We verify our methodological developme…