activity
20102024
most citedSynthesis of SnTe Nanoplates with {100} and {111} Surfaces

92 citations · 220 across the 6 of their papers we have counts for

collaborators

6 papers

cs.HC2024★ 1 cited

Skin Controlled Electronic and Neuromorphic Tattoos

Dmitry Kireev, Nandu Koripally, Samuel Liu +10

Wearable human activity sensors developed in the past decade show a distinct trend of becoming thinner and more imperceptible while retaining their electrical qualities, with graph…

cond-mat.mes-hall2021★ 4 cited

Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect

Xiaohan Wu, Ruijing Ge, Yuqian Gu +9

Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal…

cond-mat.mtrl-sci2020★ 78 cited

Multipurpose and Reusable Ultrathin Electronic Tattoos Based on PtSe2 and PtTe2

Dmitry Kireev, Emmanuel Okogbue, Jayanth RT +3

Wearable bioelectronics with emphasis on the research and development of advanced person-oriented biomedical devices have attracted immense interest in the last decade. Scientists…

cond-mat.mtrl-sci2018★ 45 cited

Uniform vapor pressure based CVD growth of MoS2 using MoO3 thin film as a precursor for co-evaporation

Sajeevi S. Withanage, Hirokjyoti Kalita, Hee-Suk Chung +3

Chemical vapor deposition (CVD) is a powerful method employed for high quality monolayer crystal growth of 2D transition metal dichalcogenides with much effort invested toward impr…

cond-mat.mes-hall2014★ 92 cited

Synthesis of SnTe Nanoplates with {100} and {111} Surfaces

Jie Shen, Yeonwoong Jung, Ankit S. Disa +3

SnTe is a topological crystalline insulator that possesses spin-polarized, Dirac-dispersive surface states protected by crystal symmetry. Multiple surface states exist on the {100}…

cond-mat.mtrl-sci2010

Extremely Low Drift in Amorphous Phase Change Nanowire Materials

Mukut Mitra, Yeonwoong Jung, Daniel S. Gianola +1

Time-dependent drift of resistance and threshold voltage in phase change memory (PCM) devices is of concern as it leads to data loss. Electrical drift in amorphous chalcogenides ha…