7 papers
Epitaxial single T centres in silicon-on-insulator
Christian H. Christiansen, Kasper H. Nielsen, Alisha Nanwani +26
Spin-photon interfaces based on silicon quantum emitters offer a scalable platform for quantum computing and networking. However, achieving coherent photon emission remains a prima…
Impact of strain on electron-phonon coupling of quantum emitters
Vytautas Žalandauskas, Rokas Silkinis, Lukas Razinkovas +6
Defects in semiconductors acting as optically active spin qubits are intriguing objects of fundamental study and future technological developments. These defect-based color centers…
Identification of the I Donor in ZnO as a Sn--Li Complex with Large Hyperfine Interaction
Xingyi Wang, Sai Mu, Jeong Rae Kim +6
Donor impurities in wide direct band gap semiconductors provide a promising platform for spin--photon quantum technologies by combining a donor spin qubit with optically addressabl…
Spin-active chlorine-related centers in 4H-SiC with telecom-band emissions
Danial Shafizadeh, Misagh Ghezellou, Viktor M. Bobal +5
A photoluminescence (PL) and magnetic resonance investigation of a defect in chlorine-implanted 4H-SiC is presented. This Cl-related center emits light at telecom wavelengths with…
Colour Centre Formation in Silicon-On-Insulator for On-Chip Photonic Integration
Arnulf J. Snedker-Nielsen, David R. Gongora, Magnus L. Madsen +12
Colour centres in silicon have great potential as single photon sources for quantum technologies. Some of them - like the T centre - also possess optically-active spins that enable…
Theory of the divacancy in 4H-SiC: Impact of Jahn-Teller effect on optical properties
Vytautas Žalandauskas, Rokas Silkinis, Lasse Vines +2
Understanding the optical properties of color centers in silicon carbide is essential for their use in quantum technologies, such as single-photon emission and spin-based qubits. I…