5 papers
Epitaxial single T centres in silicon-on-insulator
Christian H. Christiansen, Kasper H. Nielsen, Alisha Nanwani +26
Spin-photon interfaces based on silicon quantum emitters offer a scalable platform for quantum computing and networking. However, achieving coherent photon emission remains a prima…
Impact of strain on electron-phonon coupling of quantum emitters
Vytautas Žalandauskas, Rokas Silkinis, Lukas Razinkovas +6
Defects in semiconductors acting as optically active spin qubits are intriguing objects of fundamental study and future technological developments. These defect-based color centers…
Seeing the forbidden: overcoming optical selection rules through nanophotonic integration
Alex H. Rubin, Vytautas Žalandauskas, Pranta Saha +7
Optically addressable spin defects in silicon carbide, including the neutral divacancy (VV) and the negative nitrogen-vacancy (NV), are among leading building blocks of sol…
Unraveling the electronic structure of silicon vacancy centers in 4H-SiC
Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv +7
Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy () in 4H-SiC, are leading candidates for scalable quantum technolog…
Colour Centre Formation in Silicon-On-Insulator for On-Chip Photonic Integration
Arnulf J. Snedker-Nielsen, David R. Gongora, Magnus L. Madsen +12
Colour centres in silicon have great potential as single photon sources for quantum technologies. Some of them - like the T centre - also possess optically-active spins that enable…