2 papers
physics.app-ph2026
Black silicon avalanche photodiode with dopant-free multiplication region achieves >98% EQE
O. Leiviskä, O. Setälä, A. Haarahiltunen +3
Conventional silicon avalanche photodiodes (Si APDs) rely on highly doped regions to enable impact ionization and achieve internal gain. However, inefficient charge collection in t…
physics.app-ph2019
Black-silicon ultraviolet photodiodes achieve external quantum efficiency above 130%
M. Garin, J. Heinonen, L. Werner +5
At present, ultraviolet sensors are utilized in numerous fields ranging from various spectroscopy applications via biotechnical innovations to industrial process control. Despite o…