75 citations · 203 across the 4 of their papers we have counts for
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Excitation properties of the divacancy in 4H-SiC
Björn Magnusson, Nguyen Tien Son, András Csóré +4
We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbour silicon and carbon vacancies. The quenching occurs…
Identification and tunable optical coherent control of transition-metal spins in silicon carbide
Tom Bosma, Gerrit J. J. Lof, Carmem M. Gilardoni +9
Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Sev…
Clustering of vacancy defects in high-purity semi-insulating SiC
R. Aavikko, K. Saarinen, F. Tuomisto +3
Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of 4--5…