91 citations · 174 across the 4 of their papers we have counts for
4 papers
Thermal Annealing of High Dose P Implantation in 4H-SiC
Cristiano Calabretta, Massimo Zimbone, Eric G. Barbagiovanni +7
In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminesce…
Effect of high temperature annealing (T > 1650°C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
Monia Spera, Domenico Corso, Salvatore Di Franco +5
This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminium (Al) at different energies (30…
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors
Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano +6
This paper reports on the physical and temperature-dependent electrical characterizations of the oxide/semiconductor interface in MOS capacitors with a SiO2 layer deposited on 4H-S…
Correlation between microstructure deflections and film/substrate curvature under generalized stress fields
Massimo Camarda, Ruggero Anzalone, Giuseppe D'Arrigo +5
In this article we develop an analytical theory that correlates the macroscopic curvature of stressed film/substrate systems with the microscopic in-plane and out-of-plane deflecti…