5 citations · 7 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2021★ 2 cited
Anomalous ambipolar transport in depleted GaAs nanowires
H. Hijazi, D. Paget, A C. H. Rowe +7
We have used a polarized microluminescence technique to investigate photocarrier charge and spin transport in n-type depleted GaAs nanowires ( cm doping le…
physics.app-ph2020★ 5 cited
Limitation of simple np-n tunnel junction based LEDs grown by MOVPE
Yoann Robin, Quentin Bournet, Geoffrey Avit +4
We show evidence that tunnel junctions (TJs) in GaN grown by metal-organic vapor phase epitaxy are dominated by trap-assisted (Poole-Frenkel) tunneling. This stems from observation…
cond-mat.mes-hall2013
VLS-HVPE growth of ultra-long and defect-free GaAs nanowires investigated by ab initio simulation coupled to near-field microscopy
Yamina Andre, Kaddour Lekhal, Philip Hoggan +13
High aspect ratio, rod-like and single crystal phase GaAs nanowires (NWs) were grown by gold catalyst-assisted hydride vapor phase epitaxy (HVPE). High resolution transmission elec…